(最近三年,均屬SCI)

T.S. Lay, H.P. Fan, H.T. Hsu,and T.Y. Cheng,"Electro-modulation spectroscopy and laser performance of an InGaAsP asymmetric multi-quantum-well structure,"Optics Communications,211,289-294(2002)[NSC90-2215-E-110-024].

T.S. Lay, M.H. Chen ,H.M. Yang, S.H. Wu, W.H. Cheng,"1.55-µm non-antireflection-coated fiber grating laser for single-longitudinal mode operation," Optical and Quantum Electronics,34,687-696(2002[NSC89-2215-E-110-011].

T.S. Lay, M. Hong, J. Kwo, J.P. Mannaerts, W.H. Hung, D.J. Huang, "Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3)         interfaces ,"Solid-State Electronics, 45,1683-1686(2001)[NSC89-2218-E-110-023].

T.S. Lay,W.D. Liu, M. Hong, J.P.  Mannaerts, "C-V and G-V characterization of Ga2O3(Gd2O3) /GaN capacitor with low interface statedensity,"IEE Electronics Letters,37,595-597(2001)[NSC89-2218-E-110-023].

T.S. Lay, K.H. Huang, W.H. Hung, M. Hong, J. Kwo, J.P.  Mannaerts, "Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAsinterface by core level photoelectron spectroscopy,"Solid-State Electronics,45,423-426(2001)[NSC89-2218-E-110-023]

J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P.Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergnt, and J. M. Rosamilia,"Properties of high gate dielectrics Gd2O3 andY2O3for Si,"Journal of Applied Physics,89,3920-3927(2001)

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, and A. Y. Cho,C. M. Lee and J. I. Chyi,         T. S.   Lay "Properties of Ga2O3(Gd2O3)/GaN metal–insulator– semiconductor diodes,"J. Vac. Sci. Technol. B 18, 1453-1456(2000)